Silicon wafer

2-12 inch silicon wafer

Silicon wafer is the main material for making integrated circuits. It is usually made of single crystal silicon wafers. The silicon ingot is sliced and polished into a thick and thin mirror-like silicon wafer. Silicon wafer itself is not conductive, but by adding appropriate ions, it can generate positive and negative charges, which can control the flow of electrons. There are two types of semiconductors: N-type and P-type. In the N-type semiconductor state, there are too many electrons (called free electrons), which can achieve the purpose of free electron flow. The P-type semiconductor is a state of insufficient electrons, which forms electron holes. To compensate for the lack of electron holes, electrons will move freely to generate current.

Specification

Ruilong Silicon Wafers【Available in Complete Size Range】2 inch/3 inch/4 inch/5 inch/6 inch/8 inch/12 inch

Ruilong silicon wafer 【Full Specifications Available】P/N/Undoped/100/111/110/0.0001-20000Ω·cm

Ruilong Silicon Wafers【Complete Thickness Range】50um/100um/200um/300um/400um/525um/725um/1mm/2mm

Ruilong Silicon Wafers【Customized Coating Options】Single-sided double-sided oxidation selection, oxidation layer thickness selection, coating type thickness selection.

Ruilong Silicon Wafers【Customized Cutting Services】Customized size and shape selection 1mm*1mm~200*200mm

Ruilong Silicon Wafers【Complete Product Range】Single-sided double-sided oxidation. Single-sided double-sided nitridation. Silicon oxide film. Nitride silicon film. SOI silicon wafer/copper nickel platinum silicon film coating/gallium arsenide etc. III-V group and germanium wafer.

Applicable industries

Raw materials for making integrated circuit, DRAM, photodiodes, discrete components, solar cell substrates, electronic components, semiconductor components, chip power semiconductors, power management, MEMS, LCD driver ICs, fingerprint recognition, embedded memory, CMOS, mobile communications, automotive electronics, Internet of Things (IoT), industrial electronics, etc.

Silicon wafers can be customized according to the requirements
Size Polishing Model Crystal orientation Resistivity Ω•cm Thickness (micrometer)
2 SSP/DSP P/N/Undoped 100/110/111 Low resistance 0-100/High resistance 5000-20000 400±25
4 SSP/DSP P/N/Undoped 100/110/111 Low resistance 0-100/High resistance 5000-20000 525±25
6 SSP/DSP P/N/Undoped 100/110/111 Low resistance 0-100/High resistance 5000-20000 675±25
8 SSP/DSP P/N/Undoped 100/110/111 Low resistance 0-100/High resistance 5000-20000 725±25
12 SSP/DSP P/N/Undoped 100/110/111 Low resistance 0-100/High resistance 5000-20000 725±25

Customized wafer coating

Bare wafer/ dummy wafer/ coin-roll / test wafer, 2-12 inch wafer coating, wafer chromium (Cr) coating/wafer aluminum (Al) coating/wafer molybdenum (Mo) coating/wafer silicon (Si) coating/wafer copper (Cu) coating, wafer titanium (Ti) coating, and other wafer glass coating services, test wafer, dummy wafer, prime wafer, epi wafer, silicon wafer processing (coating Si + oxide wafer), Al wafer, Au wafer, SOI wafer, SOC wafer.

Applicable industries

Raw materials for making integrated circuit, DRAM, photodiodes, discrete components, solar cell substrates, electronic components, semiconductor components, chip power semiconductors, power management, MEMS, LCD driver ICs, fingerprint recognition, embedded memory, CMOS, etc.

Wafer coating can be customized according to the requirements(Cr/Mo/Cu/Sn/Ti/Sio2/Si3N4)

2-12 inch wafer packaging box

Wafer cassette/wafer box/wafer transfer box/wafer tray is a sealed and isolated clean container, mainly used for carrying wafers. It is used to store and protect wafers, preventing wafer collision, scratching, and reducing the risk of wafer contamination. It is efficient and safe to use, and meets the requirements for wafer storage, transportation or shipment. Each wafer cassette of different sizes can be used to store silicon wafer/quartz/glass/sapphire.

Applicable industries

Wafer storage, industrial laboratories, academic laboratories, national laboratories, clean rooms, semiconductors, optoelectronics, solar cells, electronics, panels, solar energy, light-emitting diodes, etc.

Type 2 inch 4 inch 5 inch 6 inch 8 inch 12 inch
Single wafer cassette
 
   
25-piece wafer cassette
 
25-piece wafer package  
50-piece wafer package  
8-inch hexagonal single-wafer sample box        
 
8-inch square single-wafer sample box        
 
12-inch square single-wafer box          

Glass wafer

2-inch, 4-inch, 6-inch, 8-inch, and 12-inch wafer glass. Wafer glass is made of customer-specified glass material. The ultra-thin glass wafers are suitable for MEMS and optoelectronic application. The diameter ranges from 50mm to 300mm, while the thickness ranges from 0.2mm to 1.8mm. It is produced by high-precision CNC and advanced laser equipment, resulting in extremely accurate dimensional tolerances and TTV values.

In addition, customized processing can be carried out according to customer needs. Customers can select glass type/thickness/size for processing.

Glass types: conductive glass, optical glass, alkali-free glass, quartz glass, BK7 glass, BK9 glass, B270 glass, Engle2000 glass, EXG glass, and D263 glass.

Applicable industries

It can be applied to the semiconductor industry, wafer foundry, wafer packaging and testing, semiconductor equipment, and semiconductor related industries.

Based on the needs of customers, select glass type/thickness/size to make glass wafers
  2 inch 4 inch 6 inch 8 inch 12 inch
Conductive glass
Optical glass
Alkali-free glass
Quartz glass
Material specified by the customer

Third-Generation Silicon Carbide (SiC) Wafers

Third-generation semiconductors refer to devices fabricated from compound semiconductor materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC). Unlike first-generation semiconductors, which use Silicon (Si) and Germanium (Ge), or second-generation devices that primarily rely on Gallium Arsenide (GaAs) and Indium Phosphide (InP), third-generation materials offer significantly enhanced performance characteristics. Although SiC and GaN are both wide-bandgap materials, their application ranges differ. GaN devices are typically used in applications below 900 V, while SiC is preferred for high-voltage applications exceeding 1,200 V. Third-generation semiconductors perform exceptionally well under high-frequency and high-temperature conditions, maintaining excellent performance and stability. They also feature high switching speed, compact size, and efficient heat dissipation, which significantly reduce chip area and simplify peripheral circuit design. Thereby reducing the module and cooling system.

Application Industries

GaN is suitable for high-frequency and high-power applications, while SiC is ideal for high-voltage and high-efficiency systems. These materials are widely used in emerging fields such as electric vehicles, 5G communications, aerospace.

4 Inch 4H N-type SIC
Ultra Grade Production Grade Dummy Grade
Diameter 100mm+0.0/-0.5mm
Surface Orientation Off-axis 4.0° toward<1120>±0.5°
Primary Flat Orientation <1100>±5.0°
Primary Flat Length 32.5mm±2.0mm
Secondary Flat Orientation 90.0° CW from Primary Flat±5.0° ,Silicon Face Up
Secondary Flat Length 18.0mm±2.0mm
Wafer Edge Chamfer
Micropipe Density ≦1 micropipes/cm2 ≦5 micropipes/cm2 ≦10 micropipes/cm2
4 Inch 4H SI SIC
Ultra Grade Production Grade Dummy Grade
Diameter 100mm+0.0/-0.5mm
Surface Orientation On-axis <0001>±0.5°
Primary Flat Orientation <1100>±5.0°
Primary Flat Length 32.5mm±2.0mm
Secondary Flat Orientation 90.0° CW from Primary Flat±5.0° ,Silicon Face Up
Secondary Flat Length 18.0mm±2.0mm
Wafer Edge Chamfer
Micropipe Density ≦1 micropipes/cm2 ≦5 micropipes/cm2 ≦20 micropipes/cm2
6 Inch 4H N-type SIC
Ultra Grade Production Grade Dummy Grade
Diameter 150mm±0.25mm
Surface Orientation Off-axis 4.0° toward<1120>±0.5°
Primary Flat Orientation <1100>±5.0°
Primary Flat Length 47.5mm±2.0mm
Wafer Edge Chamfer
Micropipe Density ≦1 micropipes/cm2 ≦5 micropipes/cm2 ≦10 micropipes/cm2
6 Inch 4H SI SIC
Ultra Grade Production Grade Dummy Grade
Diameter 150mm±0.25mm
Surface Orientation [0001]±0.25°
Primary Flat Orientation <1100>±5.0°
Primary Flat Length 1.0mm±0.25mm
Wafer Edge Chamfer
Micropipe Density ≦1 micropipes/cm2 ≦5 micropipes/cm2 ≦35 micropipes/cm2