2-12 inch silicon wafer
Silicon wafer is the main material for making integrated circuits. It is usually made of single crystal silicon wafers. The silicon ingot is sliced and polished into a thick and thin mirror-like silicon wafer. Silicon wafer itself is not conductive, but by adding appropriate ions, it can generate positive and negative charges, which can control the flow of electrons. There are two types of semiconductors: N-type and P-type. In the N-type semiconductor state, there are too many electrons (called free electrons), which can achieve the purpose of free electron flow. The P-type semiconductor is a state of insufficient electrons, which forms electron holes. To compensate for the lack of electron holes, electrons will move freely to generate current.
Specification
Ruilong Silicon Wafers【Available in Complete Size Range】2 inch/3 inch/4 inch/5 inch/6 inch/8 inch/12 inch
Ruilong silicon wafer 【Full Specifications Available】P/N/Undoped/100/111/110/0.0001-20000Ω·cm
Ruilong Silicon Wafers【Complete Thickness Range】50um/100um/200um/300um/400um/525um/725um/1mm/2mm
Ruilong Silicon Wafers【Customized Coating Options】Single-sided double-sided oxidation selection, oxidation layer thickness selection, coating type thickness selection.
Ruilong Silicon Wafers【Customized Cutting Services】Customized size and shape selection 1mm*1mm~200*200mm
Ruilong Silicon Wafers【Complete Product Range】Single-sided double-sided oxidation. Single-sided double-sided nitridation. Silicon oxide film. Nitride silicon film. SOI silicon wafer/copper nickel platinum silicon film coating/gallium arsenide etc. III-V group and germanium wafer.
Applicable industries
Raw materials for making integrated circuit, DRAM, photodiodes, discrete components, solar cell substrates, electronic components, semiconductor components, chip power semiconductors, power management, MEMS, LCD driver ICs, fingerprint recognition, embedded memory, CMOS, mobile communications, automotive electronics, Internet of Things (IoT), industrial electronics, etc.
| Silicon wafers can be customized according to the requirements | |||||
|---|---|---|---|---|---|
| Size | Polishing | Model | Crystal orientation | Resistivity Ω•cm | Thickness (micrometer) |
| 2 | SSP/DSP | P/N/Undoped | 100/110/111 | Low resistance 0-100/High resistance 5000-20000 | 400±25 |
| 4 | SSP/DSP | P/N/Undoped | 100/110/111 | Low resistance 0-100/High resistance 5000-20000 | 525±25 |
| 6 | SSP/DSP | P/N/Undoped | 100/110/111 | Low resistance 0-100/High resistance 5000-20000 | 675±25 |
| 8 | SSP/DSP | P/N/Undoped | 100/110/111 | Low resistance 0-100/High resistance 5000-20000 | 725±25 |
| 12 | SSP/DSP | P/N/Undoped | 100/110/111 | Low resistance 0-100/High resistance 5000-20000 | 725±25 |